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MCBS260N10YHE3-TP

Name: Micro Commercial Components (MCC) MCBS260N10YHE3-TP
Brand: Micro Commercial Components (MCC)
SKU: 833-MCBS260N10YHE3
Price: 31002 COP
Availability: InStock

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Mouser N.º:

833-MCBS260N10YHE3

Fabricante N.º:

MCBS260N10YHE3-TP

Fabricante:

Micro Commercial Components (MCC)

Descripción:

Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CHANNEL MOSFET,TO-263-7

Ciclo de vida:

Nuevo producto:

Lo nuevo de este fabricante.

Hoja de datos:

MCBS260N10YHE3-TP Hoja de datos (PDF)

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En existencias: 690

Existencias:: 690 Se puede enviar inmediatamente

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Plazo de entrega de fábrica:: 26 Semanas Tiempo estimado de producción de fábrica para cantidades superiores a las que se muestran.

Introducir cantidad:

Mínimo: 1 Múltiples: 1

Precio unitario:

$ -

Precio ext.:

$ -

Est. Tarifa:

Precio (COP)

Cantidad	Precio unitario	Precio ext.
	$ 31.002	$ 31.002
	$ 21.006	$ 210.060
	$ 18.812	$ 1.881.200
	$ 15.522	$ 7.761.000
	$ 14.763	$ 14.763.000
Envase tipo carrete completo (pedir en múltiplos de 8000)
	$ 14.763	$ 118.104.000

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Atributo del producto	Valor de atributo	Seleccionar atributo
Fabricante:	Micro Commercial Components (MCC)
Categoría de producto:	Transistor metal-óxido-semiconductor de efecto de campo (MOSFET)
RoHS:
Tecnología:	Si
Estilo de montaje:	SMD/SMT
Paquete / Cubierta:	TO-263-7
Polaridad del transistor:	N-Channel
Número de canales:	1 Channel
Vds - Tensión disruptiva entre drenaje y fuente:	100 V
Id - Corriente de drenaje continua:	260 A
Rds On - Resistencia entre drenaje y fuente:	1.8 mOhms
Vgs - Tensión entre puerta y fuente:	- 20 V, 20 V
Vgs th - Tensión umbral entre puerta y fuente:	4 V
Qg - Carga de puerta:	161 nC
Temperatura de trabajo mínima:	- 55 C
Temperatura de trabajo máxima:	+ 150 C
Dp - Disipación de potencia :	375 W
Modo canal:	Enhancement
Empaquetado:	Reel
Empaquetado:	Cut Tape
Marca:	Micro Commercial Components (MCC)
Configuración:	Single
Tiempo de caída:	123.7 ns
Tipo de producto:	MOSFETs
Tiempo de subida:	174.5 ns
Serie:	MCBS260N10YHE3
Cantidad de empaque de fábrica:	8000
Subcategoría:	Transistors
Tipo de transistor:	Split Gate Trench MOSFET
Tiempo de retardo de apagado típico:	109 ns
Tiempo típico de demora de encendido:	41 ns

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Hoja de datos

MCBS260N10YHE3-TP Hoja de datos (PDF)

USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

MCBS High-Current Industrial-Strength MOSFETs

Micro Commercial Components (MCC) MCBS High-Current Industrial-Strength MOSFETs are N-channel MOSFETs that power industrial designs with a combination of productivity and sustainability. Available in 100V and 40V options in a TO-263-7 package, the MCBS2x components are made to handle the high-temperature, high-power demands of diverse industrial equipment and systems. These MOSFETs deliver reliable performance in junction temperatures of up to +175°C with a low profile, sub 2mΩ R_DS(on), and split-gate trench (SGT) technology. Additional engineer-friendly features include a continuous drain current of over 200A, excellent heat dissipation, high current density, and an eco-friendly design.

MCBS260N10YHE3 Power MOSFET

Micro Commercial Components (MCC) MCBS260N10YHE3 Power MOSFET is a 100V, AEC-Q101-qualified auto-grade MOSFET with enhanced robustness. This MOSFET is designed with Split Gate Trench MOSFET technology, which improves R_DS(on) of 1.8mΩ and delivers high power density in a compact D2PAK-7L (TO-263-7) package. The MCBS260N10YHE3 power MOSFET operates at -55°C to 175°C temperature range. The superior thermal properties ensure minimized losses and effectively dissipate heat amid high thermal loads. This MCBS260N10YHE3 MOSFET is ideal for battery management systems, motor drives, electric power steering, seat controls, lighting controls, electric water pumps, and DC-DC converters.

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